Semiconductor device including low-voltage device and middle-voltage device, display driving device including the same, and method of manufacturing semiconductor device
AssigneeLx Semicon Co., Ltd.
InventorKee Joon CHOI
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Abstract
A semiconductor device according to the present disclosure includes a low-voltage device configured to receive a first level voltage and a first middle-voltage device configured to receive a second level voltage higher than the first level voltage. The low-voltage device includes a low-voltage well region, the first middle-voltage device includes a 1-1st middle-voltage well region and a 1-2nd middle-voltage well region, and the low-voltage well region and the 1-1st middle-voltage well region have a first well concentration with respect to a first conductivity type impurity.
Claims19
A semiconductor device comprising:
- a low-voltage device configured to receive a first level voltage;
- and
- a first middle-voltage device configured to receive a second level voltage higher than the first level voltage,
- wherein the low-voltage device comprises a low-voltage well region,
- wherein the first middle-voltage device comprises a 1-1st middle-voltage well region and a 1-2nd middle-voltage well region, and
- wherein the low-voltage well region and the 1-1st middle-voltage well region have a first well concentration with respect to a first conductivity type impurity.
A display driving device comprising:
- a low-voltage device configured to receive a first level voltage;
- and
- a first middle-voltage device configured to receive a second level voltage higher than the first level voltage,
- wherein the low-voltage device comprises a low-voltage well region,
- wherein the first middle-voltage device comprises a 1-1st middle-voltage well region and a 1-2nd middle-voltage well region, and
- wherein the low-voltage well region and the 1-1st middle-voltage well region have a first well concentration with respect to a first conductivity type impurity.
A method of manufacturing a semiconductor device, the method comprising:
- forming a low-voltage well region and a 1-1st middle-voltage well region;
- forming a 1-2nd middle-voltage well region and a second middle-voltage well region;
- forming a low-voltage drift region and a 1-1st middle-voltage drift region;
- forming a 1-2nd middle-voltage drift region;
- forming a source region and a drain region;
- and
- forming a gate dielectric layer.
Dependencies are inferred from the claim text.