Loading patent…
AssigneesOrdos Yuansheng Optoelectronics Co., Ltd., Boe Technology Group Co., Ltd.
InventorsYongqiang ZHANG, Jian SUN, Jingyi XU, Aiyu DING, Feng LI, Lei YAO
Estimating the term…
An array substrate includes a display area and a peripheral area on a side of the display area, and includes a base substrate, at least one low temperature polycrystalline silicon thin film transistor on the base substrate and in the peripheral area, and at least one oxide thin film transistor on the base substrate and in the display area; the low temperature polycrystalline silicon thin film transistor includes a low temperature polycrystalline silicon semiconductor layer, a first gate, and a first source and a first drain, which are sequentially arranged along a direction away from the base substrate; the oxide thin film transistor includes an oxide semiconductor layer, a second gate, and a second source and a second drain, which are sequentially arranged along the direction away from the base substrate; and the first source and the first drain are each in a different layer from the second gate.
An array substrate, comprising a display area and a peripheral area on a side of the display area, wherein the array substrate comprises a base substrate, at least one low temperature polycrystalline silicon thin film transistor on the base substrate and in the peripheral area, and at least one oxide thin film transistor on the base substrate and in the display area;
A method of manufacturing an array substrate, comprising:
Dependencies are inferred from the claim text.