Semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsAHREUM KIM, SUNGHOON KIM, DAESEOK BYEON
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Abstract
A semiconductor device includes a substrate, an N-well area formed in the substrate, a first P-channel metal oxide semiconductor (PMOS) transistor having active regions formed in the N-well area, and a first N-channel metal oxide semiconductor (NMOS) transistor having active regions formed in the substrate. The first NMOS transistor includes a first N-type active region overlapping each of the substrate and the N-well area, when viewed from above a plane parallel to a top surface of the substrate.
Claims20
A semiconductor device comprising:
- a substrate;
- an N-well area formed in the substrate;
- a P-channel metal oxide semiconductor (PMOS) transistor including a first P-type active region and a second P-type active region formed in the N-well area;
- and
- a N-channel metal oxide semiconductor (NMOS) transistor including a first N-type active region and a second N-type active region formed in the substrate,
- wherein the first N-type active region overlaps the N-well area, when viewed from above a plane parallel to a top surface of the substrate, and
- wherein the first N-type active region includes at least one first N+ implant area.
- wherein a body bias of the first PMOS transistor is provided directly through the first N-type active region.
A semiconductor device comprising:
- a first transistor including a first gate, a first active region, and a second active region;
- and
- a second transistor including a second gate, a third active region, and a fourth active region,
- wherein a body bias of the second transistor is directly provided by the first active region.
The semiconductor device of claim 17, further comprising:
- a first metal line electrically connected between the first active region and the third active region.
A semiconductor device comprising:
- a P-channel metal oxide semiconductor (PMOS) transistor including a first PMOS terminal, a second PMOS terminal, and a first gate terminal;
- and
- a N-channel metal oxide semiconductor (NMOS) transistor including a first NMOS terminal, a second NMOS terminal, and a second gate terminal,
- wherein the first PMOS terminal and the second NMOS terminal are electrically connected to each other through a metal line, and
- a body bias of the PMOS transistor is directly provided by a first N-type active region of the NMOS transistor, the first N-type active region electrically connected to the second NMOS terminal.
Dependencies are inferred from the claim text.