Thermal Dissipation Structures and Methods for Forming Same

A method for forming an integrated semiconductor device, comprising:

• forming a first via in a first integrated circuit (IC);
• forming an interconnect routing over and in contact with the first via;
• forming a second via over the first IC and in contact with the interconnect routing;
• bonding a second IC over the interconnect routing;
• and
• forming a molding layer around the second IC and the second via.

A method for forming an integrated semiconductor device, comprising:

• forming a first thermal dissipation feature partially through a first integrated circuit (IC);
• bonding a second IC onto the first IC;
• forming a dielectric layer on the first IC and surrounding the second IC;
• forming an opening in the dielectric layer, the opening exposing the first thermal dissipation feature;
• and
• forming a second thermal dissipation feature in the opening, the second thermal dissipation feature extending through the dielectric layer and connected to the first thermal dissipation feature.