Semiconductor structure and method of forming semiconductor structure

A method of forming a semiconductor structure, comprising:

• providing a substrate, wherein the substrate includes a first side and a second side opposite to the first side, and the substrate includes a first region and a second region;
• forming a device layer over the first side of the first region, wherein the device layer includes a device structure within the device layer;
• forming a first electrical connection structure over the device layer, wherein the first electrical connection structure is electrically connected to the device structure;
• forming a second electrical connection structure over the first side of the second region;
• forming a first connecting structure in in the first region, wherein the first connecting structure penetrates the substrate, and the first connecting structure is electrically connected to the device structure;
• forming a third electrical connection structure over the second side of the first region, wherein the third electrical connection structure is electrically connected to the first connecting structure;
• and
• forming a second connecting structure in the second region, wherein the second connecting structure is electrically connected to the third electrical connection structure, the second connecting structure extends from the second side to the first side, the second connecting structure penetrates the substrate and the device layer, and the second connecting structure is electrically connected to the second electrical connection structure.