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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPei-Hsuan LEE, Hung-Ming CHEN, Kuang-Shing CHEN, Yu-Hsiang CHENG, Xiaomeng CHEN
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A high atomic number material is applied to one or more surfaces of a semiconductor structure of a wafer. The one or more surfaces are at a depth different from a depth of a surface of the wafer. An electron beam is scanned over the semiconductor structure to cause a backscattered electron signal to be collected at a collector. A profile scan of the semiconductor structure is generated based on an intensity of the backscattered electron signal, at the collector, resulting from the high atomic number material. The high atomic number material increases the intensity of the backscattered electron signal for the one or more surfaces of the semiconductor structure such that contrast in the profile scan is increased. The increased contrast of the profile scan enables accurate critical dimension measurements of the semiconductor structure.
A system, comprising:
An electron microscope, comprising:
A scan processing device, comprising:
Dependencies are inferred from the claim text.