Methods of Forming Semiconductor Devices

A method comprising:

• depositing a dielectric layer over fins;
• forming a cut mask over the dielectric layer, the cut mask comprising a first dielectric material, the cut mask having cut openings, each of the cut openings defined by segments of the first dielectric material;
• forming a line mask over the cut mask and in the cut openings, the line mask having slot openings, the slot openings being strips extending perpendicular to the fins;
• and
• patterning the dielectric layer by etching portions of the dielectric layer exposed by both the cut openings and the slot openings.

A method comprising:

• forming a masking layer over an inter-layer dielectric, the inter-layer dielectric disposed over a semiconductor fin;
• forming a cut mask over the masking layer, the cut mask comprising a first cut portion, a second cut portion, and a first trim portion, the semiconductor fin disposed between the first cut portion and the second cut portion in a top-down view, the first trim portion connecting the first cut portion to the second cut portion, the first trim portion overlapping the semiconductor fin in the top-down view;
• forming a line mask over the cut mask, the line mask comprising a slot opening, the slot opening overlapping the first trim portion in the top-down view;
• patterning the masking layer using the line mask and the cut mask as a combined etching mask;
• and
• transferring a pattern of the masking layer to the inter-layer dielectric.