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US 2024/0266218 A1Published application
Integrated circuit structure and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTe-Chih HSIUNG, Peng WANG, Jyun-De WU, Huan-Just LIN
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Abstract
A semiconductor structure includes a semiconductive fin, a gate structure, a plurality of source/drain regions, an un-oxidized dielectric cap, and an oxidized dielectric cap. The gate structure extends across the semiconductive fin. The source/drain regions are over the semiconductive fin and at opposite sides of the gate structure. The un-oxidized dielectric cap is atop the gate structure. The oxidized dielectric cap is atop the oxidized dielectric cap.
Claims20
A semiconductor structure, comprising:
- a semiconductive fin;
- a gate structure extending across the semiconductive fin;
- a plurality of source/drain regions over the semiconductive fin and at opposite sides of the gate structure;
- an un-oxidized dielectric cap atop the gate structure;
- and
- an oxidized dielectric cap atop the oxidized dielectric cap.
3 more elements
A semiconductor structure, comprising:
- a channel pattern;
- a plurality of epitaxial structures on opposite sides of the channel pattern;
- a gate structure around the channel pattern;
- a silicon nitride cap over the gate structure;
- and
- a silicon oxynitride cap over the silicon nitride cap.
3 more elements
A method, comprising:
- forming a gate structure extending across a channel pattern;
- forming a plurality of source/drain regions over the channel pattern;
- depositing a cap layer over the gate structure;
- and
- performing an oxygen plasma treatment on the cap layer to oxidize a top portion of the cap layer while a bottom portion of the cap layer remains un-oxidized.
2 more elements
Dependencies are inferred from the claim text.