Plasma processing apparatus and plasma processing method

A plasma processing method using a plasma processing apparatus including

• a chamber in which a plasma processing is performed,
• a stage which is disposed in the chamber and on which a substrate held by a conveying carrier having an annular frame and a holding sheet is placed,
• an electrostatic chuck system disposed inside the stage and having an electrostatic chuck electrode that, when applied with a voltage, chucks the substrate to the stage, and
• a plasma generation unit that, when applied with a high-frequency power, generates a first plasma and a second plasma in the chamber,
• the method comprising:
• a control step of controlling the electrostatic chuck system and the plasma generation unit such that a processing with the first plasma and a processing with the second plasma are performed on the substrate while the substrate is chucked to the stage;
• and
• an abnormality detection step of detecting an abnormality, based on a plurality of parameters indicating an operating status of the electrostatic chuck system and the plasma generation unit, wherein
• in the abnormality detection step, an abnormality detection during a predetermined period immediately after switching between the processing with the first plasma and the processing with the second plasma is performed, based on a first parameter that includes a monitoring information related to at least one of a voltage and a current applied to the electrostatic chuck electrode and does not include a monitoring information related to a pressure within the chamber, and an abnormality detection during other than the predetermined period is performed, based on a second parameter that includes the monitoring information related to the pressure within the chamber.