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US 2024/0266189 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeAmkor Technology Singapore Holding Pte. Ltd.
InventorsJong Sik Paek, Doo Hyun Park, Seong Min Seo, Sung Geun Kang, Yong Song, Wang Gu Lee, Eun Young Lee, Seo Yeon Ahn, Pil Je Sung
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Abstract
A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.
Claims20
An electronic device comprising:
- an under layer comprising a mold material, wherein the under layer includes an under layer top side, an under layer bottom side, and an under layer aperture that extends between the under layer top side and the under layer bottom side;
- an interposer comprising an interposer top side, an interposer lateral side, an interposer bottom side coupled to the under layer top side, an interposer dielectric layer at the interposer bottom side, and an interposer conductive layer at the interpose bottom side, wherein at least a portion of an interposer conductive layer bottom side is exposed by the under layer aperture;
- an interconnection structure electrically coupled to the interposer conductive layer bottom side through the under layer aperture;
- and
- a first semiconductor die electrically coupled to the interposer.
2 more elements
An electronic device comprising:
- an under layer of a mold material, wherein the under layer includes an under layer top side, an under layer bottom side, and an under layer aperture that extends between the under layer top side and the under layer bottom side;
- an interposer dielectric layer comprising an interposer dielectric layer top side and an interposer dielectric layer bottom side, wherein the interposer dielectric layer bottom side outwardly faces the under layer top side and is coupled to the under layer via the under layer top side;
- an interposer conductive layer comprising an interposer conductive layer top side and an interposer conductive layer bottom side, and wherein at least a portion of the interposer conductive layer bottom side is exposed by the under layer aperture;
- an upper dielectric layer and an upper conductive layer on the interposer dielectric layer top side;
- and
- a lower signal distribution structure comprising a lower signal distribution structure top side, wherein the lower signal distribution structure top side outwardly faces the under layer bottom side and is electrically coupled to the interposer conductive layer via the under layer aperture and the interposer conductive layer bottom side.
3 more elements
A method of manufacturing an electronic device, the method comprising:
- providing an under layer of a mold material, wherein the under layer includes an under layer top side, an under layer bottom side, and an under layer aperture that extends between the under layer top side and the under layer bottom side;
- providing an interposer dielectric layer comprising an interposer dielectric layer top side and an interposer dielectric layer bottom side, wherein the interposer dielectric layer bottom side outwardly faces the under layer top side and is coupled to the under layer via the under layer top side;
- providing an interposer conductive layer comprising an interposer conductive layer top side and an interposer conductive layer bottom side, and wherein at least a portion of the interposer conductive layer bottom side is exposed by the under layer aperture;
- providing an upper dielectric layer and an upper conductive layer on the interposer dielectric layer top side;
- and
- providing a lower signal distribution structure comprising a lower signal distribution structure top side, wherein the lower signal distribution structure top side outwardly faces the under layer bottom side and is electrically coupled to the interposer conductive layer via the under layer aperture and the interposer conductive layer bottom side.
3 more elements
Dependencies are inferred from the claim text.