Stress management for precise substrate -to- substrate bonding

A system comprising:

• a memory;
• and
• a processing device communicatively coupled to the memory, the processing device is to cause performance of operations comprising:
• obtaining a first substrate supporting one or more transferred features (TFs);
• transferring the one or more TFs from the first substrate to a second substrate;
• applying stress mitigation to a target substrate, wherein the target substrate comprises at least one of:
• the first substrate,
• an auxiliary substrate supporting the one or more TFs prior to transferring the one or more TFs from the auxiliary substrate to the first substrate, or
• the second substrate;
• wherein applying stress mitigation to the target substrate comprises:
• obtaining, using optical inspection data, an out-of-plane deformation (OPD) profile of the target substrate;
• causing a stress compensation layer (SCL) to be deposited on the target substrate;
• and
• exposing the SCL to a stress-mitigation beam, wherein settings of at least one or more of (i) the SCL or (ii) the stress-mitigation beam are determined using the OPD profile of the target substrate.

A semiconductor manufacturing system, comprising:

• one or more processing chambers to process a substrate;
• and
• a computing device to cause performance of operations comprising:
• obtaining a first substrate supporting one or more transferred features (TFs);
• transferring the one or more TFs from the first substrate to a second substrate;
• applying stress mitigation to a target substrate, wherein the target substrate comprises at least one of:
• the first substrate,
• an auxiliary substrate supporting the one or more TFs prior to transferring the one or more TFs from the auxiliary substrate to the first substrate, or
• the second substrate;
• wherein applying stress mitigation to the target substrate comprises:
• obtaining, using optical inspection data, an out-of-plane deformation (OPD) profile of the target substrate;
• causing a stress compensation layer (SCL) to be deposited on the target substrate;
• and
• exposing the SCL to a stress-mitigation beam, wherein settings of at least one or more of (i) the SCL or (ii) the stress-mitigation beam are determined using the OPD profile of the target substrate.