Selective etching of silicon-containing material relative to metal-doped boron films

A semiconductor structure comprising:

• a substrate;
• a silicon-and-oxygen material overlying the substrate;
• a silicon-carbon-and-nitrogen material overlying the silicon-and-oxygen material;
• a metal-doped boron-containing material overlying the silicon-carbon-and-nitrogen material, wherein the metal-doped boron-containing material comprises a metal dopant comprising tungsten;
• and
• one or more additional materials overlying the metal-doped boron-containing material, wherein the one or more additional materials comprise a patterned photoresist material.

A semiconductor processing method comprising:

• depositing a metal-doped boron-containing material over a silicon-containing material overlying a substrate disposed within a processing region of a semiconductor processing chamber, wherein the metal-doped boron-containing material comprises a metal;
• delivering a fluorine-containing precursor and an oxygen-containing precursor to the processing region of the semiconductor processing chamber;
• forming a plasma of the fluorine-containing precursor and the oxygen-containing precursor within the processing region of the semiconductor processing chamber;
• and
• etching the silicon-containing material, wherein the etching removes a portion of the metal-doped boron-containing material, and wherein the metal increases an etch rate of the silicon-containing material.