Method of manufacturing semiconductor structure
AssigneeNanya Technology Corporation
InventorHSUAN-WU LAI
Life of this patent
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Abstract
A method of manufacturing a semiconductor structure is provided. The method includes providing a semiconductor wafer having a central region and a bevel region. The method also includes forming a carbon-containing layer over the central region and the bevel region of the semiconductor wafer. The method further includes performing a wet etching operation to remove the carbon-containing over the bevel region of the semiconductor wafer. The method also includes performing a baking operation on the bevel region of the semiconductor wafer.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- providing a semiconductor wafer having a central region and a bevel region;
- forming a carbon-containing layer over the central region and the bevel region of the semiconductor wafer;
- performing a wet etching operation to remove the carbon-containing layer over the bevel region of the semiconductor wafer;
- and
- performing a baking operation on the bevel region of the semiconductor wafer.
A method of manufacturing a semiconductor structure, comprising:
- providing a semiconductor wafer having a bevel region;
- forming a carbon-containing layer over the bevel region of the semiconductor wafer;
- performing an anisotropic etching operation on the carbon-containing layer over the bevel region of the semiconductor wafer;
- performing a wet etching operation on the carbon-containing layer over the bevel region of the semiconductor wafer;
- and
- performing a baking operation on the bevel region of the semiconductor wafer.
Dependencies are inferred from the claim text.