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AssigneeXi' An Jiaotong University
InventorsXu YANG, Xiaozhe YANG, Zhuangde JIANG
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Disclosed are electrochemical-mechanical thinning method and apparatus for large-diameter semiconductor wafers. The large-diameter semiconductor wafers are thinned by combining anodizing modification and mechanical grinding. The apparatus includes a grinding tool system, a wafer holding device and a grinding wheel dressing device. The grinding tool system includes a base plate and a cup-shaped grinding wheel. The base plate is taken as a cathode, and the semiconductor wafer is taken as an anode. During thinning, both the cathode and the anode are immersed in an electrolyte. Under the action of an external electric field, the semiconductor wafer is subjected to surface modification and softening. At the same time, an oxide layer and intermediate state products generated by modification are removed together by using the grinding wheel, and the semiconductor wafer is thinned under the combined action of multi-energy fields of electricity, chemistry, machinery and force.
An electrochemical-mechanical thinning apparatus for large-diameter semiconductor wafers, comprising a grinding tool system (1), wherein the grinding tool system (1) is mounted on a lifting device, a wafer holding device (9) is arranged below the grinding tool system (1), the grinding tool system (1) comprises a base plate (2) and a grinding wheel (3), and the grinding wheel (3) is fixed to a lower end of the base plate (2);
Dependencies are inferred from the claim text.