Carbon and boron implantation for backside chemical mechanical planarization control
AssigneeApplied Materials, Inc.
InventorsYan Zhang, Johannes M. van Meer, Jae Young Lee, Naushad Variam
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Abstract
A method of processing a workpiece that will include a backside power delivery network is disclosed. The method includes forming a CMP marker layer in the workpiece at the depth to which the workpiece is to be thinned. This CMP marker layer, which may be a boron-rich layer, serves to slow the chemical-mechanical planarization (CMP) process. To minimize the diffusion of boron in this boron-rich layer, the boron-rich layer is sandwiched by implants of a first species of ions, where this first species of ions serves to slow the diffusion of the boron. In certain embodiments, carbon is used as the first species of ions.
Claims18
A method of fabricating a semiconductor device having active devices connected with a backside power delivery system, comprising:
- implanting a marking species into a front side of a workpiece to create a Chemical Mechanical Planarization (CMP) marker layer, wherein the CMP marker layer has a peak concentration of the marking species at a first depth;
- performing front end of line (FEOL) processes on the front side of the workpiece to create the active devices;
- performing back end of line (BEOL) processes to create metallization layers on the front side of the semiconductor device;
- thinning the workpiece using a CMP process on a backside of the workpiece, wherein the CMP process slows when the CMP marker layer is exposed;
- creating nano through silicon vias (nTSVs) to expose the active devices within the semiconductor device;
- and
- adding metallization layers to the back side of the workpiece, wherein the metallization layers contact the active devices.
A method of fabricating a semiconductor device capable of having active devices connected with a backside power delivery system, comprising:
- performing a first implant of a first species of ions into the front side of a workpiece;
- implanting a marking species into a front side of the workpiece, such that a peak concentration of the marking species is at a first depth;
- performing a second implant of a first species of ions into the front side of a workpiece;
- wherein after the first implant, the second implant and the implanting of the marking species, a Chemical Mechanical Planarization (CMP) marker layer is created;
- performing front end of line (FEOL) processes on the front side of the workpiece to create the active devices;
- performing back end of line (BEOL) processes to create metallization layers on the front side of the semiconductor device;
- and
- thinning the workpiece using a CMP process on a backside of the workpiece, wherein the CMP process slows when the CMP marker layer is exposed.
Dependencies are inferred from the claim text.