Method for manufacturing transistor device, and transistor device

Abstract

Embodiments of the present disclosure provide a method for manufacturing a transistor device, and a transistor device. The method for manufacturing a transistor device includes: injecting, into a channel of at least one first transistor located in an electrical break (EB) region, doping ions of a different type from the first transistor, and/or injecting, into a channel of at least one second transistor located outside the EB region, doping ions of a same type as the second transistor; and forming the transistor device based on the first transistor and the second transistor into which doping ions have been injected.

Dependencies are inferred from the claim text.