Semiconductor structure comprising an electrically conductive bonding interface, and associated manufacturing method

Semiconductor structure (100) according to the preceding claim, wherein the working layer (10) and the carrier substrate (30) are formed of the same semiconductor material and have an identical doping type.

Semiconductor structure (100) according to either of the preceding claims, wherein the semiconductor material of the working layer (10) is chosen from among silicon carbide, silicon, gallium nitride and germanium.

Semiconductor structure (100) according to one of the preceding claims, wherein the semiconductor material of the carrier substrate (30) is chosen from among silicon carbide, silicon, gallium nitride and germanium, and has a monocrystalline, polycrystalline or amorphous structure.

Semiconductor structure (100) according to one of the preceding claims, wherein the metal material of the nodules (21) is chosen from among tungsten, titanium, nickel, aluminium, molybdenum, niobium, tantalum, cobalt and copper.

Semiconductor structure (100) according to one of the preceding claims, wherein the degree of coverage of the nodules (21) in a median plane (P) of the interface zone (20) is between 1% and 70%.

Semiconductor structure (100) according to one of the preceding claims, wherein the nodules (21) have a resistivity lower than 0.1 mohm.cm2, preferably lower than or equal to 0.01 mohm.cm2, so as to obtain a resistivity of the interface zone (20) lower than 0.1 mohm.cm2, preferably lower than or equal to 0.01 mohm.cm2.

Semiconductor structure (100) according to one of the preceding claims, wherein the nodules (21) have a thickness of less than or equal to 20 nm, or even less than or equal to 10 nm.

Power component produced on and/or in the working layer (10) of a semiconductor structure (100) according to one of the preceding claims, and comprising at least one electrical contact on and/or in the carrier substrate (30), at the level of a back face of the semiconductor substrate (100).

Production process according to the preceding claim, wherein the working layer (10) and the carrier substrate (30) are formed of the same semiconductor material and have an identical doping type.

Production process according to either of the two preceding claims, wherein step a) comprises an operation of implanting light species into a donor substrate (1) so as to form a buried weakened plane (11) that delimits, with a front face (10a) of the donor substrate (1), the working layer (10).

Production process according to the preceding claim, wherein step a) comprises the formation of the donor substrate (1) by epitaxially growing a donor layer (1′) on an initial substrate, the implantation being performed later, into the donor layer (1′).

Production process according to either of the two preceding claims, wherein step d) comprises, after the direct joining giving rise to a bonded assembly (200) comprising the donor substrate (1) and the carrier substrate (30), a separation at the level of the buried weakened plane (11) so as to form, on the one hand, the intermediate structure (150) comprising the working layer (10), the encapsulated film (2′) and the carrier substrate (30) and, on the other hand, the remainder of the donor substrate (1″).

Production process according to one of the five preceding claims, comprising, prior to deposition step c), a step c′) of deoxidation of the free face (10a) to be joined of the working layer (10) and/or of the free face (30a) to be joined of the carrier substrate (30).

Production process according to one of the six preceding claims, wherein the deposition of step c) and the direct joining of step d) are performed in one in the same apparatus.

Production process according to one of the seven preceding claims, wherein the thickness of the film (2) deposited in step c) is less than or equal to 10 nm, or even less than or equal to 5 nm, or even less than or equal to 2 nm.

Production process according to one of the eight preceding claims, wherein steps c) and d) are performed in vacuum.

Production process according to one of the nine preceding claims, wherein deposition step c) is performed at ambient temperature, using a sputtering technique.

Production process according to one of the ten preceding claims, wherein the critical temperature is between 500° C. and 1800° C., depending on the nature of the metal material of the encapsulated film (2) and of the one or more semiconductor materials of the working layer (10) and of the carrier substrate (30).