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US 2024/0266166 A1Published application
Dielectric densification
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Ming Lin, Szu-Hua Chen, Kenichi Sano, Wei-Yen Woon, Szuya Liao
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Abstract
A low thermal budget dielectric material treatment is provided. An example method of the present disclosure includes providing a semiconductor structure, depositing a dielectric material over the semiconductor structure, treating the dielectric material with a gaseous species carried in a supercritical fluid, and after the treating, reducing a thickness of the dielectric material.
Claims20
A method, comprising:
- providing a semiconductor structure;
- depositing a dielectric material over the semiconductor structure;
- treating the dielectric material with a gaseous species carried in a supercritical fluid;
- and
- after the treating, reducing a thickness of the dielectric material.
2 more elements
A radical treatment system for treating a dielectric material on a semiconductor structure, comprising:
- a gas source;
- a carrier fluid source;
- a heat exchanger configured to cool or heat up a carrier fluid from the carrier fluid source to a temperature greater than a supercritical temperature of the carrier fluid;
- a pump configured to pump the carrier fluid from the heat exchanger to a pressure greater than a supercritical pressure of the carrier fluid to form supercritical fluid;
- a autoclave to receive a gas from the gas source and the supercritical fluid from the heat exchanger to form a gas radical;
- and
- a process chamber controllably connected to the autoclave to receive the gas radical carried by the supercritical fluid,
- wherein the process chamber is configured to receive a substrate and a dielectric material disposed over the substrate.
5 more elements
A method, comprising:
- receiving a workpiece that includes at least one of a plurality of metal layers in a gate structure;
- depositing a dielectric material over the workpiece;
- treating the dielectric material with a gaseous species carried in a supercritical fluid;
- and
- after the treating, reducing a thickness of the dielectric material.
2 more elements
Dependencies are inferred from the claim text.