Plasma uniformity control system and methods
AssigneeApplied Materials, Inc.
InventorsMichael Andrew STEARNS, Alok RANJAN, Kartik RAMASWAMY, Peng TIAN, Timothy Joseph FRANKLIN, Chris BLANK, Carlaton WONG
Life of this patent
Estimating the term…
Loading patent…
AssigneeApplied Materials, Inc.
InventorsMichael Andrew STEARNS, Alok RANJAN, Kartik RAMASWAMY, Peng TIAN, Timothy Joseph FRANKLIN, Chris BLANK, Carlaton WONG
Estimating the term…
Embodiments of the present disclosure include an apparatus and methods for the plasma processing of a substrate. Some embodiments are directed to a plasma processing chamber. The plasma processing chamber generally includes a planar coil region comprising a concentric coil region comprising a first concentric coil and a second concentric coil, and a power supply circuit coupled to the first concentric coil and the second concentric coil. The first concentric coil may include a first coil with a diameter measured in a direction parallel to a first plane that is smaller than the diameter of a second coil included in the second concentric coil. The power supply circuit may be configured to bias the first concentric coil and the second concentric coil to adjust a generated magnetic field in a region of control of a plasma in the plasma processing chamber to control a plasma density of the plasma.
A plasma processing chamber, comprising:
A method of processing a substrate, comprising performing a processing sequence on the substrate disposed within a processing region of a plasma processing chamber, wherein the processing sequence comprises:
A method of processing a substrate, comprising performing a processing sequence on the substrate disposed within a processing region of a plasma processing chamber, wherein the processing sequence comprises:
Dependencies are inferred from the claim text.