Methods for Semiconductor Process Chamber
AssigneeTokyo Electron Limited
InventorsQi Wang, Hamed Hajibabaeinajafabadi, Sergey Voronin, Akiteru Ko
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Abstract
A method for performing an etch process includes forming a first protective layer over chamber walls of a semiconductor process chamber and performing a first etch process on an exposed major surface of a first substrate loaded into the semiconductor process chamber. The exposed major surface includes a first metal oxide resist layer. After performing the first etch process on the first substrate, the first protective layer is removed from the chamber walls with a cleaning process.
Claims20
A method for performing an etch process, the method comprising:
- forming a first protective layer over chamber walls of a semiconductor process chamber;
- performing a first etch process on an exposed major surface of a first substrate loaded into the semiconductor process chamber, the exposed major surface comprising a first metal oxide resist layer;
- and
- after performing the first etch process on the first substrate, removing the first protective layer from the chamber walls with a cleaning process.
A method for performing an etch process, the method comprising:
- loading a first wafer into a process chamber;
- depositing a protective coating on chamber walls of the process chamber and on the first wafer while monitoring a thickness of the protective coating on the first wafer;
- removing the first wafer from the process chamber;
- loading a second wafer into the process chamber, a metal oxide resist being on the second wafer;
- performing a development process on the second wafer;
- removing the second wafer from the process chamber;
- and
- performing a cleaning process in the process chamber, the cleaning process removing the protective coating.
A method for performing an etch process, the method comprising:
- flowing a fluorogas into a process chamber;
- igniting a first plasma comprising the fluorogas, the first plasma depositing a protective layer over inner surfaces of the process chamber;
- loading a process wafer with a metal oxide resist into the process chamber;
- etching the metal oxide resist with HBr gas in the process chamber, wherein residues from the etching of the metal oxide resist are deposited on the protective layer;
- removing the process wafer from the process chamber;
- flowing an oxidizing gas into the process chamber;
- and
- igniting a second plasma comprising the oxidizing gas, the second plasma removing the protective layer.
Dependencies are inferred from the claim text.