Perovskite solar cell with silicon dioxide antireflection layer

1:

• A perovskite solar cell with silicon dioxide antireflection layer, wherein the solar cell is a three-tandem perovskite/silicon tandem solar cell, comprising:
• an silicon dioxide antireflection coating (ARC);
• a first transparent conductive oxide layer (TCO), wherein the ARC is adjacent and above the first TCO;
• a hole transport layer (HTL), wherein the TCO is adjacent and above the HTL;
• a perovskite (PVT) layer, wherein the HTL is adjacent and above the PVT layer, wherein the PVT layer comprises one or more perovskites having a formula ABX3 wherein A is a monovalent methylammonium or formamidinium cation, B is a divalent metal cation selected from the group consisting of Pb2+ and Sn2+, and X is a halide anion selected from the group consisting of Cl−, Br−, and I−;
• a second transparent conductive oxide layer (TCO), wherein the PVT layer is adjacent and above the second TCO;
• an electron transport layer (ETL) comprising a porous silicon, wherein the second TCO layer is adjacent and above the ETL;
• a plurality of buried contacts, wherein the buried contacts comprise silicon nanowires and are disposed in and pass through the ETL into the second TCO and into a p-type Si layer;
• a p-type wafer-based homo-junction silicon solar cell with the buried contacts being in point contact configuration with the ETL, wherein the ETL is adjacent and above the p-type silicon solar cell;
• a n+ silicon layer, wherein the p-type silicon solar cell is adjacent and above the n+ silicon layer;
• a back contact layer, wherein the n+ silicon layer is adjacent and above the back contact layer, which uses an internal thermal barrier;
• and
• wherein the three-tandem perovskite/silicon tandem solar cell has a top sub-cell, a bottom sub-cell and a middle contact-based tandem;
• wherein the top sub-cell includes the PVT layer;
• the bottom sub-cell includes the silicon solar cell;
• and
• the middle contact-based tandem includes the second TCO layer;
• and
• a conduction and a valence band edge are at a front surface of the ETL;
• the porous silicon is on a surface of the silicon solar cell;
• and
• a porosity of the porous silicon is from 2.5 to 22.5 vol %.