Semiconductor device structure
AssigneesEtron Technology, Inc., Invention And Collaboration Laboratory Pte. Ltd.
InventorChao-Chun LU
Life of this patent
Estimating the term…
Abstract
A semiconductor device structure includes a silicon substrate, a transistor, and an interconnection. The silicon substrate has a silicon surface. The transistor includes a gate structure, a first conductive region, a second conductive region, and a channel under the silicon surface. The interconnection is extended beyond the transistor and coupled to the first conductive region of the transistor. The interconnection is disposed under the silicon surface and isolated from the silicon substrate by an isolation region.
Claims18
A semiconductor device structure comprising:
- a semiconductor substrate with an original semiconductor surface and an active region;
- a transistor within the active region and comprising a gate structure, a first conductive region next to the gate structure, a second conductive region next to the gate structure, and a channel under the gate structure;
- a STI region next to the active region;
- and
- a first metal layer positioned within the STI region and under the original semiconductor surface.
A semiconductor device structure comprising:
- a substrate with an original surface and an active region;
- a transistor within the active region;
- a first STI region next to a first side of the active region;
- a first conductive layer positioned within the first STI region and under the original surface;
- and
- a first oxide layer within the first STI region and under the first conductive layer.
A semiconductor device structure comprising:
- a substrate with an original surface, a first active region and a second active region;
- a transistor within the first active region;
- a STI region between the first active and the second active region;
- a first layer with a first conductivity and positioned within the STI region, wherein the first layer is positioned within the STI region and under the original surface;
- and
- an oxide layer within the STI region and under the first layer;
- wherein the first layer is made of a first material different from the oxide layer.
A semiconductor device structure comprising:
- a substrate with an original surface and an active region;
- a transistor within the active region;
- a STI region with a first STI zone and a second STI zone, wherein the STI region at least surrounds two sides of the active region through the first STI zone and a second STI zone;
- a first layer with a first conductivity and positioned within the first STI zone and/or the second STI zone;
- and
- an oxide layer within the STI region and under the first layer.
Dependencies are inferred from the claim text.