Ceramic copper circuit board and semiconductor device using same

Abstract

A ceramic copper circuit board according to an embodiment includes a ceramic substrate, and a copper circuit part bonded to at least one surface of the ceramic substrate via a brazing material layer. The brazing material layer includes one or two selected from Cu, Ti, Sn, or In. The brazing material layer includes a bonding part located between the ceramic substrate and the copper circuit part, and a first jutting part located at a periphery of the bonding part; and a titanium content of the first jutting part is within a range of not less than 70 mass % and not more than 100 mass %. It is favorable for the total of the titanium content and the nitrogen content of the first jutting part to be not less than 99 mass % and not more than 100 mass %.

Dependencies are inferred from the claim text.