Acoustic wave device with interdigital transducer electrode having seed layer
AssigneeSkyworks Solutions, Inc.
InventorsKurt George Steiner, Alan Sangone Chen, Yosuke Hamaoka, Benjamin Paul Abbott, Michael David Hill, Kezia Cheng
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Abstract
An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, and an interdigital transducer electrode formed with the piezoelectric layer. The interdigital transducer electrode includes a first layer, a second layer over the first layer, and a seed layer between the first layer and the piezoelectric layer. A combination of the first layer and the seed layer has a resistivity that is lower than a resistivity of the first layer alone.
Claims20
An acoustic wave device comprising:
- a piezoelectric layer;
- and
- an interdigital transducer electrode formed with the piezoelectric layer, the interdigital transducer electrode including a first layer, a second layer over the first layer, and a seed layer between the first layer and the piezoelectric layer, a combination of the first layer and the seed layer having a resistivity lower than a resistivity of the first layer alone.
An acoustic wave device comprising:
- a piezoelectric layer;
- and
- an interdigital transducer electrode formed with the piezoelectric layer, the interdigital transducer electrode including a first layer, a second layer over the first layer, and a tungsten seed layer between the first layer and the piezoelectric layer.
An acoustic wave device configured to generate a surface acoustic wave having a wavelength L, the acoustic wave device comprising:
- a piezoelectric layer;
- and
- an interdigital transducer electrode formed with the piezoelectric layer, the interdigital transducer electrode including a first layer, a second layer over the first layer, and a seed layer between the first layer and the piezoelectric layer, the first layer having a first thickness in a range of 0.01 L to 0.075 L, the second layer having a second thickness in a range of 0.05 L to 0.2 L, and the seed layer having a third thickness in a range of 5 nm to 50 nm.
Dependencies are inferred from the claim text.