Acoustic wave device and method for producing same
AssigneeSanan Japan Technology Corporation
InventorsSUBEI SHUN, Shinichi Shioi
Life of this patent
Estimating the term…
Abstract
An acoustic wave device includes a high acoustic velocity substrate, a medium acoustic velocity layer formed on the main surface of the high acoustic velocity substrate, and a piezoelectric substrate formed directly or via another layer on the main surface of the medium acoustic velocity layer, wherein an acoustic velocity is slowed down gradually from the main surface of the high acoustic velocity substrate toward the main surface of the medium acoustic velocity layer between the high acoustic velocity substrate and the medium acoustic velocity layer; and a method for producing the same.
Claims12
An acoustic wave device comprising:
- a high acoustic velocity substrate;
- a medium acoustic velocity layer formed on a main surface of the high acoustic velocity substrate;
- and
- a piezoelectric substrate formed directly or via another layer on a main surface of the medium acoustic velocity layer;
- wherein an acoustic velocity is slowed down gradually from the main surface of the high acoustic velocity substrate toward the main surface of the medium acoustic velocity layer between the high acoustic velocity substrate and the medium acoustic velocity layer.
A method for producing an acoustic wave device, the method comprising:
- a step of polishing a sapphire substrate;
- a step of disposing magnesium oxide on a main surface of the sapphire substrate;
- a step of forming a polycrystalline spinel layer by bringing the sapphire substrate and the magnesium oxide into close contact with each other and by heat treatment;
- a step of removing the magnesium oxide and polishing the polycrystalline spinel layer;
- and
- a step of forming a piezoelectric substrate on the polycrystalline spinel layer.
Dependencies are inferred from the claim text.