Gate drive circuit and power conversion device
AssigneeHitachi Astemo, Ltd.
InventorsNaoki SAKURAI, Masahiro DOI
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AssigneeHitachi Astemo, Ltd.
InventorsNaoki SAKURAI, Masahiro DOI
Estimating the term…
A gate drive circuit is connected to a semiconductor element having a gate terminal via a gate resistor and changes a gate voltage applied to the gate terminal to drive the semiconductor element, and when a condition that a current flowing through the semiconductor element is equal to or greater than a predetermined first threshold value and equal to or less than a predetermined second threshold value greater than the first threshold value and a temperature of the semiconductor element is equal to or greater than a predetermined third threshold value and equal to or less than a predetermined fourth threshold value greater than the third threshold value is satisfied, a resistance value of the gate resistor when the semiconductor element is turned on is switched to a value greater than that when the condition is not satisfied.
A gate drive circuit that is connected to a semiconductor element having a gate terminal via a gate resistor and changes a gate voltage applied to the gate terminal to drive the semiconductor element, wherein when a condition that a current flowing through the semiconductor element is equal to or greater than a predetermined first threshold value and equal to or less than a predetermined second threshold value greater than the first threshold value and a temperature of the semiconductor element is equal to or greater than a predetermined third threshold value and equal to or less than a predetermined fourth threshold value greater than the third threshold value is satisfied, a resistance value of the gate resistor when the semiconductor element is turned on is switched to a value greater than that when the condition is not satisfied.
Dependencies are inferred from the claim text.