US 2024/0258668 A1Published application

Phase shifter and antenna

AssigneesBeijing BOE Sensor Technology Co., Ltd., Boe Technology Group Co., Ltd.

InventorsXiaobo WANG, Haocheng JIA, Chuncheng CHE, Zhifeng ZHANG, Cuiwei TANG, Yong LIU, Honggang LIANG, Sheng CHEN, Xueyan SU, Hailong LIAN, Yi DING, Jing XIE, Wei ZHANG, Weisi ZHOU, Meng WEI, Jing WANG, Zhenguo ZHANG, Feng QU

Life of this patent

Estimating the term…

patentgrep

Loading patent…

Abstract

There is provided a phase shifter having a phase shift region and a peripheral region, and including a first substrate, a second substrate and a dielectric layer between such two substrates; the first substrate includes a first dielectric substrate, a first electrode and a first auxiliary structure; the second substrate includes a second dielectric substrate, a second electrode and a second auxiliary structure; the phase shift region includes overlapping regions; the first electrode and the second electrode are located in the phase shift region, and have orthographic projections, on the first dielectric substrate, overlapped at least partially in the overlapping regions; the first auxiliary structure is in the peripheral region and on a side, close to the dielectric layer, of the first dielectric substrate; the second auxiliary structure is in the peripheral region and on a side, close to the dielectric layer, of the second dielectric substrate.

Claims27

Dependent claims

A phase shifter, comprising a first substrate and a second substrate disposed opposite to each other, and a dielectric layer disposed between the first substrate and the second substrate;

the first substrate comprises a first dielectric substrate and a first electrode arranged on a side of the first dielectric substrate close to the dielectric layer;
the second substrate comprises a second dielectric substrate and a second electrode arranged on a side of the second dielectric substrate close to the dielectric layer;
the phase shifter has a phase shift region and a peripheral region;
the phase shift region comprises at least one group of overlapping regions, and each group comprises a plurality of overlapping regions arranged at intervals along a transmission direction in which a microwave signal is transmitted;
the first electrode and the second electrode are both located in the phase shift region, and orthographic projections of the first electrode and the second electrode on the first dielectric substrate are overlapped at least partially in the overlapping regions to form a plurality of capacitors;
the phase shifter further comprises a first auxiliary structure and a second auxiliary structure;
the first auxiliary structure is located in the peripheral region and arranged on a side, close to the dielectric layer, of the first dielectric substrate;
the second auxiliary structure is located in the peripheral region and arranged on a side, close to the dielectric layer, of the second dielectric substrate.

5 more elements

A method for manufacturing a phase shifter, comprising:

forming a first substrate and a second substrate, and aligning and combining the first substrate and the second substrate into a cell, and filling a dielectric layer between the first substrate and the second substrate;
wherein the phase shifter has a phase shift region and a peripheral region, the phase shift region comprises at least one group of overlapping regions, and each group comprises a plurality of overlapping regions arranged at intervals along a transmission direction in which a microwave signal is transmitted;
the forming the first substrate comprises:
providing a first dielectric substrate;
and
forming a first electrode and a first auxiliary structure on the first dielectric substrate, with the first electrode being located in the phase shift region, and the first auxiliary structure being located in the peripheral region;
the forming the second substrate comprises:
providing a second dielectric substrate;
and
forming a second electrode and a second auxiliary structure on the second dielectric substrate, with the second electrode being located in the phase shift region, and the second auxiliary structure being located in the peripheral region;
orthographic projections of the first electrode and the second electrode in the overlapping regions are at least partially overlapped to form a plurality of capacitors.

8 more elements

Dependencies are inferred from the claim text.