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US 2024/0258458 A1Published application
Multijunction light emitting diodes
AssigneeAlliance for Sustainable Energy, LLC
InventorsRyan Matthew FRANCE, Kirstin ALBERI
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Abstract
The present disclosure relates to a device that includes a first stack and a second stack, with each stack including, in order: an n-type cladding layer constructed of an alloy selected from at least one of GaInP, AlGaAs, GaInAsP, and/or AlGaInP, an n-type outer barrier layer constructed of at least one of GaAs and/or GaP; at least one quantum well; a p-type outer barrier layer constructed of at least one GaAs or GaP; and a p-type cladding layer constructed an alloy selected from at least one of GaInP, AlGaAs, GaInAsP, and/or AlGaInP; and a tunnel junction.
Claims20
A device comprising:
- a tunnel junction;
- and
- a first stack and a second stack, each stack comprising, in order:
- an n-type cladding layer comprising an alloy selected from the group consisting of GaInP, AlGaAs, GaInAsP, and AlGaInP;
- an n-type outer barrier layer comprising at least one of GaAs or GaP;
- at least one quantum well;
- a p-type outer barrier layer comprising at least one of GaAs or GaP;
- and
- a p-type cladding layer comprising an alloy selected from the group consisting of GaInP, AlGaAs, GaInAsP, and AlGaInP, wherein:
- the tunnel junction is positioned between the p-type cladding layer of the first stack and the n-type cladding layer of the second stack,
- the device is capable of emitting light having a wavelength between 880 nm and 1300 nm, and
- the tunnel junction is transparent to the emitted light.
9 more elements
Dependencies are inferred from the claim text.