Multi-junction solar cell
AssigneeMeyer Burger (Germany) GmbH
InventorHermann-Josef NONNENMACHER
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AssigneeMeyer Burger (Germany) GmbH
InventorHermann-Josef NONNENMACHER
Estimating the term…
The invention relates to a multi-junction solar cell comprising at least two sub-cells based on silicon and at least one material other than silicon, wherein a first sub-cell is designed to use photons in a spectral region of a shorter wavelength than a spectral region of a longer wavelength of a second sub-cell, the second sub-cell being based on silicon and the first sub-cell being based on a material which has a larger band gap than silicon, wherein the first sub-cell and the second sub-cell are designed as a monolithic unit consisting of a layer stack, and wherein the first sub-cell and the second sub-cell are electrically connected to one another in series by means of a tunnel diode, such that the tandem solar cell is equipped with two terminals, wherein the tunnel diode has a tunnel diode n layer and a tunnel diode p layer. The problem addressed is that of proposing a multi-junction solar cell of simple construction. The problem is solved by multi-junction solar cells in which the tunnel diode n layer and/or the tunnel diode p layer is/are silicon-based layer(s).
1-15. (canceled)
Multi-junction solar cell comprising at least two subcells based on silicon and a material other than silicon, wherein a first subcell is configured for using photons in a spectral range of shorter wavelength than a second subcell with a spectral range of longer wavelength, in that the second subcell is based on silicon and the first subcell is made from a material with a larger band gap than silicon, wherein the first subcell and the second subcell are configured as a monolithic unit consisting of a layer stack, and wherein the first subcell and the second subcell are connected to one another electrically in series by means of a tunnel diode, so that the tandem solar cell is provided with two terminals, wherein the tunnel diode has a tunnel diode n-layer and a tunnel diode p-layer wherein the tunnel diode n-layer and/or the tunnel diode p-layer is a silicon-based layer.
Dependencies are inferred from the claim text.