DIFFUSED B-Ga2O3 PHOTOCONDUCTIVE DEVICES
AssigneesLawrence Livermore National Security, LLC, Washington State University
InventorsClint Frye, Sara E. Harrison, Joel Basile Varley, Lars F. Voss, Jani Jesenovec, Benjamin Dutton, Dylan Evans, John S. McCloy
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Abstract
Various devices, systems and methods such as photonductive semiconductor switches (PCSS) and optically addressable light valves (OALVs) include a photoconducting β-Ga2O3 layer having a transition metal (TM) doped region formed by diffusion of transition metal into a β-Ga2O3 substrate. The diffusion of the TM into the β-Ga2O3 substrate provides for the controlled concentration and thickness of the doped TM region that is integrated into the bulk β-Ga2O3 substrate.
Claims20
A photoconductive semiconductor device, said photoconductive semiconductor device comprising:
- a first conductor;
- a layer of β-Ga2O3 or alloy thereof, said layer of β-Ga2O3 or alloy thereof including a region doped with transition metal, said doped region (a) having a thickness of no more than 100 micrometers, (b) having a gradient in concentration of said transition metal that decreases from an edge of said layer of β-Ga2O3 or alloy thereof, or (c) both;
- and
- a second conductor, said second conductor on the opposite side of said layer of β-Ga2O3 or alloy thereof than said first conductor,
- wherein at least one of said first and second conductor is optically transmissive.
A method of forming a photoconductive semiconductor device, said method comprising:
- providing a substrate of β-Ga2O3 or alloy thereof;
- diffusing a transition metal into said β-Ga2O3 or β-Ga2O3 alloy substrate;
- providing a first conductor on one side of said β-Ga2O3 or β-Ga2O3 alloy substrate, said first conductor layer being optically transmissive;
- and
- providing a second conductor layer on an opposite side of said β-Ga2O3 or β-Ga2O3 alloy substrate as said first conductor layer.
The method of claim 13, wherein said transition metal is diffused into said β-Ga2O3 or β-Ga2O3 alloy substrate by depositing said transition metal on said β-Ga2O3 or β-Ga2O3 alloy substrate and heating said β-Ga2O3 or β-Ga2O3 alloy substrate with said transition metal thereon.
The method of claim 13, wherein providing a substrate of β-Ga2O3 or alloy thereof comprises providing a β-Ga2O3 substrate.
The method of claim 13, wherein providing a substrate of β-Ga2O3 or alloy thereof alloy comprise providing a substrate of a β-Ga2O3 alloy.
The photoconductive semiconductor device of claim 7, wherein said layer of β-Ga2O3 or alloy thereof comprises a layer of β-Ga2O3.
A photoconductive semiconductor device comprising:
- a first conductor;
- a layer of β-Ga2O3 or alloy thereof;
- and
- a second conductor, said second conductor on an opposite side of said layer of β-Ga2O3 or alloy thereof than said first conductor,
- wherein said layer of β-Ga2O3 or alloy thereof includes a doped region with a transition metal diffused therein, and
- wherein at least one of said first and second conductors is optically transmissive.
The photoconductive semiconductor device of claim 7, wherein said layer of β-Ga2O3 or alloy thereof comprises a layer of a β-Ga2O3 alloy.
Dependencies are inferred from the claim text.