Platinum group metal chalcogenide thin film, and semiconductor material provided with the platinum group metal chalcogenide thin film

Abstract

The present invention relates to a thin film containing a chalcogenide of Ir or Ru of a platinum group metal. This thin film is formed on a prescribed substrate, contains a platinum group metal chalcogenide, and the platinum group metal chalcogenide contains any one of Ir2S3, IrS2, RuS2, and RuSe2. A thickness of the thin film is 0.5 nm or more and 500 nm or less. The present invention has revealed, through an experimental method and simulation using first-principles calculation based on density functional theory (DFT), that a thin film containing Ir2S3, IrS2, RuS2 or RuSe2 can exhibit a photoelectric effect by near infrared light irradiation. The present invention is drawn to a thin film that is characterized by sensitivity to light with a wavelength in a near infrared region in particular, and contains a platinum group metal chalcogenide having a constitution previously unknown.

Dependencies are inferred from the claim text.