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US 2024/0258445 A1Published application
Optical sensor using ferroelectrics and method for manufacturing the same
AssigneeKorea Advanced Institute of Science and Technology
InventorsSung-Yool Choi, Hyeok Jun Jin, Khang June Lee
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Abstract
The present invention relates to an optical sensor using ferroelectrics, including a substrate; a first type semiconductor stacked on the substrate; and a second type semiconductor in contact with the first type semiconductor to form a heterojunction structure, wherein at least one of the first type semiconductor or the second type semiconductor is ferroelectrics.
Claims9
An optical sensor using ferroelectrics, comprising:
- a substrate;
- a first type semiconductor stacked on the substrate;
- and
- a second type semiconductor in contact with the first type semiconductor to form a heterojunction structure,
- wherein at least one of the first type semiconductor or the second type semiconductor is ferroelectrics.
2 more elements
A method for manufacturing an optical sensor using ferroelectrics, comprising:
- stacking a first type semiconductor on a substrate;
- stacking a second type semiconductor on the first type semiconductor, wherein a heterojunction structure is formed by a contact between the first type semiconductor and the second type semiconductor;
- patterning a first electrode in electrical communication with the first type semiconductor on two sides of the first type semiconductor;
- and
- patterning a second electrode on the second type semiconductor and in contact with the second type semiconductor.
2 more elements
Dependencies are inferred from the claim text.