Solar cell panel, cell piece and production process for cell piece

Abstract

A silicon oxide layer is formed on the back surface of an N-type silicon wafer; an N-type silicon layer is formed on the silicon oxide layer, wherein the phosphine concentration of the N-type silicon layer is within a first preset concentration range; and an antireflection layer is formed on the N-type silicon layer and a back electrode is formed on the antireflection layer. In the high-temperature annealing process, hydrogen atoms can be bound by phosphine, such that membrane explosion caused by the escape of hydrogen atoms is avoided, an open-circuit voltage, the conversion efficiency and a filling factor can be improved, a back passivation effect can be enhanced, and the quality of a cell piece can be improved.

Dependencies are inferred from the claim text.