Light absorption structure and light sensing device having the same
AssigneesSamsung Electronics Co., Ltd., Korea Advanced Institute of Science and Technology
InventorsInsung JOE, Jonghwa SHIN, Joonkyo JUNG, Jong Uk KIM
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Abstract
A light sensing device includes a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of holes each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period; a first electrode in one region of the semiconductor layer; and a second electrode on the second surface of the semiconductor layer and having a reflective metal.
Claims20
A resonator-based light absorption structure, comprising:
- a first semiconductor layer configured to be an optical cavity of the resonator;
- a distributed Bragg reflector structure including a plurality of posts, comprising a semiconductor material, on a first surface of the first semiconductor layer, each of the plurality of posts having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period;
- and
- a reflective layer on a second surface of the first semiconductor layer, the second surface of the first semiconductor layer opposite to the first surface of the first semiconductor layer,
- wherein the width change period extends parallel to a direction extending from the first surface of the first semiconductor layer towards the second surface of the first semiconductor layer.
A light sensing device, comprising:
- a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer, and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of posts each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period;
- a first electrode in one region of the semiconductor layer;
- and
- a second electrode on the second surface of the semiconductor layer and having a reflective metal,
- wherein the width change period extends parallel to a direction extending from the first surface of the semiconductor layer to the second surface of the semiconductor layer.
A light sensing device, comprising:
- a semiconductor layer including a distributed Bragg reflector including a first surface of the semiconductor layer and a photoelectric conversion unit including a second surface of the semiconductor layer, and the distributed Bragg reflector has a plurality of posts each having, in a cross-sectional view, a width gradually changing from a first width to a second width according to a width change period;
- a first electrode in one region of the semiconductor layer;
- a second electrode on the second surface of the semiconductor layer and having a reflective metal;
- and
- a logic substrate including a logic circuit, the logic substrate on the second surface of the semiconductor layer and electrically connected to the first and second electrodes, the logic circuit configured to process a signal output by the photoelectric conversion unit,
- wherein the width change period extends parallel to a direction extending from the first surface of the semiconductor layer to the second surface of the semiconductor layer.
Dependencies are inferred from the claim text.