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US 2024/0258418 A1Published application
Transistor devices, power devices, and method of manufacturing thereof
OwnerGilberto CURATOLAinventor
Life of this patent
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Abstract
A member includes a silicon base substrate layer, a transition layer, a gallium nitride (GaN) buffer, a first aluminum gallium nitride (AlGaN) barrier layer, a first p-doped gallium nitride (pGaN) layer, where a portion of the GaN buffer layer forms a first GaN channel layer. The member further includes a second GaN channel layer, a second AlGaN barrier layer, and a second pGaN layer. The second pGaN layer is connected to the first pGaN layer by a connecting pGaN portion. The member further includes a gate contact, a source contact, and a drain contact, where the first pGaN channel layer is arranged between the source contact and the drain contact.
Claims20
A member, comprising:
- a silicon base substrate layer;
- a transition layer arranged over the silicon base substrate layer;
- a gallium nitride (GaN) buffer layer arranged over the transition layer, a first aluminum gallium nitride (AlGaN) barrier layer arranged over the gallium nitride (GaN) buffer layer;
- a first p-doped gallium nitride (pGaN) layer arranged over the first AlGaN barrier layer, wherein a portion of the GaN buffer layer forms a first GaN channel layer, and wherein the first GaN channel layer, the first AlGaN barrier layer, and the first pGaN layer form a first epitaxial stack;
- a second GaN channel layer arranged over the first pGaN layer;
- a second AlGaN barrier layer arranged over the second GaN channel layer;
- a second pGaN layer arranged over the second AlGaN barrier layer;
- a gate contact arranged over the second pGaN layer;
- a source contact arranged over the first AlGaN barrier layer;
- and
- a drain contact arranged over the first AlGaN barrier layer, wherein the second pGaN layer is connected to the first pGaN layer by a connecting pGaN portion extending through a space in the second AlGaN barrier layer (and the second GaN channel layer, and wherein the first pGaN layer is arranged between the source contact and the drain contact.
8 more elements
A power device comprising a member, the member comprising:
- a silicon base substrate layer;
- a transition layer arranged over the silicon base substrate layer;
- a gallium nitride (GaN) buffer layer arranged over the transition layer,
- a first aluminum gallium nitride (AlGaN) barrier layer arranged over the GaN buffer layer, and
- a first-doped gallium nitride (pGaN) layer arranged over the first AlGaN barrier layer, wherein a portion of the GaN buffer layer forms a first GaN channel layer, and wherein the first GaN channel layer, the first AlGaN barrier layer and the first pGaN layer form a first epitaxial stack, wherein the member further comprises:
- a second GaN channel layer arranged over the first pGaN layer;
- a second AlGaN barrier layer arranged over the second GaN channel layer;
- a second pGaN layer arranged over the second AlGaN barrier layer;
- a gate contact arranged over the second pGaN layer (112B);
- a source contact arranged over the first AlGaN barrier layer;
- and
- a drain contact arranged over the first AlGaN barrier layer, wherein the second pGaN layer is connected to the first pGaN layer by a connecting pGaN portion extending through a space in the second AlGaN barrier layer and the second GaN channel layer, and wherein the first pGaN layer is arranged between the source contact and the drain contact.
9 more elements
A method for manufacturing a member, wherein the method comprises:
- arranging a gallium nitride (GaN) buffer layer arranged over a transition layer arranged over a silicon base substrate layer;
- arranging a first aluminum gallium nitride (AlGaN) barrier layer over the GaN buffer layer;
- arranging a first p-doped gallium nitride (pGaN) layer over the first AlGaN barrier layer;
- arranging a second GaN channel layer over the first pGaN layer;
- arranging a second AlGaN barrier layer over the second GaN channel layer;
- arranging a second pGaN layer over the second AlGaN barrier layer;
- arranging a gate contact over the second pGaN layer;
- arranging a source contact over the first AlGaN barrier layer;
- arranging a drain contact over the first AlGaN barrier layer;
- arranging a sacrificial passivation layer over the second pGaN layer;
- forming a space in the sacrificial passivation layer, the second pGaN layer, the second AlGaN barrier layer and the second GaN channel layer;
- and
- connecting the first pGaN layer with the second pGaN layer by arranging a connecting pGaN portion extending in the space.
10 more elements
Dependencies are inferred from the claim text.