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US 2024/0258409 A1Published application
Semiconductor device and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei YAMAZAKI, Toshihiko TAKEUCHI, Naoto YAMADE, Hiroshi FUJIKI, Tomoaki MORIWAKA, Shunsuke KIMURA
Life of this patent
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Abstract
A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
Claims7
A semiconductor device comprising:
- a substrate;
- a first insulator over the substrate;
- a first conductor over the first insulator;
- a second conductor over the first conductor;
- a second insulator over the second conductor;
- an oxide over the second insulator;
- a third insulator over the oxide;
- a third conductor over the third insulator;
- a fourth insulator over the third conductor;
- a fourth conductor over the fourth insulator;
- and
- a fifth insulator over the fourth conductor,
- wherein the second conductor comprises a region configured to function as a first gate electrode of a transistor,
- wherein the third conductor comprises a region configured to function as a second gate electrode of the transistor,
- wherein the oxide comprises a first region configured to function as a channel formation region of the transistor and a second region configured to function as a first electrode of a capacitor, and
- wherein the fourth conductor comprises a region configured to function as a second electrode of the capacitor.
13 more elements
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a third transistor;
- and
- a first capacitor,
- wherein a first channel formation region of the first transistor comprises silicon,
- wherein a first insulator is provided over the first channel formation region,
- wherein a first conductor is provided over the first insulator,
- wherein the first conductor comprises a region configured to function as a first gate electrode of the first transistor,
- wherein a second insulator is provided over the first conductor,
- wherein a second conductor and a third conductor are provided over the second insulator,
- wherein a third insulator is provided over the second conductor and the third conductor,
- wherein an oxide is provided over the third insulator,
- wherein the oxide comprises a first region configured to function as a second channel formation region of the second transistor, a second region configured to function as a third channel formation region of the third transistor, and a third region configured to function as a first electrode of the first capacitor,
- wherein a fourth insulator is provided over the oxide,
- wherein a fourth conductor is provided over the fourth insulator,
- wherein a fifth conductor is provided over the oxide,
- wherein a fifth insulator is provided over the fourth conductor and the fifth conductor,
- wherein a sixth conductor is provided over the fifth insulator,
- wherein the sixth conductor comprises a region configured to function as a second electrode of the first capacitor, and
- wherein the first conductor is electrically connected to the first electrode of the first capacitor.
18 more elements
A semiconductor device comprising:
- a first transistor;
- a second transistor;
- a third transistor;
- a fourth transistor;
- and
- a first capacitor,
- wherein a first channel formation region of the first transistor comprises silicon,
- wherein a second channel formation region of the second transistor comprises silicon,
- wherein a first oxide is provided over the first transistor and the second transistor,
- wherein a second oxide is provided over the fourth transistor,
- wherein the first oxide comprises a first region configured to function as a third channel formation region of the third transistor,
- wherein the second oxide comprises a first region configured to function as a fourth channel formation region of the fourth transistor and a second region configured to function as a first electrode of the first capacitor,
- wherein a first insulator is provided over the second oxide, and
- wherein a first conductor comprising a region configured to function as a second electrode of the first capacitor is provided over the first insulator.
11 more elements
Dependencies are inferred from the claim text.