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US 2024/0258405 A1Published application
Semiconductor device including multiple spacers and a method for preparing the same
AssigneeNanya Technology Corporation
InventorCHUNG-LIN HUANG
Life of this patent
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Abstract
A semiconductor device and a method for preparing the same are provided. The semiconductor device includes a substrate, a gate electrode, a first spacer, and a second spacer. The gate electrode is disposed on the substrate. The first spacer is disposed on a sidewall of the gate electrode. The second spacer covers the first spacer. The first spacer includes dopants.
Claims18
A semiconductor device, comprising:
- a substrate;
- a plurality of first gate electrodes on the substrate;
- a first spacer disposed on a sidewall of each of the plurality of first gate electrodes;
- a first lightly doped region disposed within the substrate and between two of the plurality of first gate electrodes;
- a second lightly doped region disposed within the substrate and between two of the plurality of first gate electrodes;
- and
- a plurality of second gate electrodes, wherein the plurality of first gate electrodes has a first distance, and the plurality of second gate electrodes has a second distance different from the first distance;
- wherein the first lightly doped region overlaps the second lightly doped region, the first lightly doped region has a first dimension, and the second lightly doped region has a second dimension less than the first dimension along a first direction.
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A method for preparing a semiconductor device, comprising:
- providing a substrate;
- forming a first gate electrode on the substrate;
- forming a second gate electrode on the substrate and adjacent to the first gate electrode;
- forming a first dielectric layer covering the first gate electrode and the second gate electrode;
- patterning the first dielectric layer to form a first spacer on a sidewall of the first gate electrode and a second spacer on a sidewall of the second gate electrode;
- forming a second dielectric layer covering the first spacer and the second spacer;
- and
- patterning the second dielectric layer to form a third spacer covering the first spacer and a fourth spacer covering the second spacer.
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Dependencies are inferred from the claim text.