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US 2024/0258404 A1Published application
Semiconductor device including multiple spacers and a method for preparing the same
AssigneeNanya Technology Corporation
InventorCHUNG-LIN HUANG
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Abstract
A semiconductor device and a method for preparing the same are provided. The semiconductor device includes a substrate, a gate electrode, a first spacer, and a second spacer. The gate electrode is disposed on the substrate. The first spacer is disposed on a sidewall of the gate electrode. The second spacer covers the first spacer. The first spacer includes dopants.
Claims20
A semiconductor device, comprising:
- a substrate;
- a gate electrode disposed on the substrate;
- a first spacer disposed on a sidewall of the gate electrode;
- and
- a second spacer covering the first spacer,
- wherein the first spacer comprises dopants.
3 more elements
A semiconductor device, comprising:
- a substrate;
- a plurality of first gate electrodes on the substrate;
- a first spacer disposed on a sidewall of each of the plurality of first gate electrodes;
- a first lightly doped region disposed within the substrate and between two of the plurality of first gate electrodes;
- and
- a second lightly doped region disposed within the substrate and between two of the plurality of first gate electrodes,
- wherein the first lightly doped region overlaps the second lightly doped region, the first lightly doped region has a first dimension, and the second lightly doped region has a second dimension less than the first dimension along a first direction.
4 more elements
Dependencies are inferred from the claim text.