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US 2024/0258403 A1Published application
In-situ deposition of oxide passivation layer on iii-nitride based hemt
AssigneeUniversity of South Carolina
InventorsIftikhar Ahmad, Samiul Hasan, Mohi Uddin Jewel
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Abstract
Described herein are methods, systems, and processes for in-situ oxide dielectric deposition in the same reactor, integrating III-Nitride and III-Oxide technology using N2 as carrier gas that results in a lower density of interface traps (charges).
Claims17
A method for forming a metal oxide semiconductor heterojunction field effect transistor comprising:
- employing a single process step in-situ metal-organic chemical vapor phase epitaxy using nitrogen as a carrier gas to provide for vertical metal-organic chemical vapor deposition;
- wherein at least one ultra-wide-bandgap semiconductor is deposited via metal-organic chemical vapor deposition onto at least one high-electron-mobility transistor heterostructure atop at least one sapphire substrate to form at least one in-situ metal oxide semiconductor heterojunction field effect transistor.
An improved metal oxide semiconductor heterojunction field effect transistor comprising:
- at least one uppermost β-Ga2O3 layer formed above a AlGaN barrier layer that is formed above an AlN spacer layer formed above a GaN layer formed over a second AlN layer formed atop at least one sapphire substrate;
- wherein the metal oxide semiconductor heterojunction field effect transistor is formed in situ in a single reactor.
Dependencies are inferred from the claim text.