Schottky barrier diode with reduced leakage current and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMENG-HAN LIN, TE-AN CHEN
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Abstract
A method of manufacturing a Schottky barrier diode includes: forming a first well region and a second well region adjacent to the first well region in a substrate; depositing a first dielectric layer over the first well region and the second well region; performing a first patterning operation on the first dielectric layer to cause the first dielectric layer to include a stepped shape; performing a second patterning operation on the first dielectric layer to form a gate dielectric layer of a first transistor device in the second well region; and forming a conductive layer over the first well region to obtain a Schottky barrier interface.
Claims20
A method of manufacturing a Schottky barrier diode, comprising:
- forming a first well region and a second well region adjacent to the first well region in a substrate;
- depositing a first dielectric layer over the first well region and the second well region;
- performing a first patterning operation on the first dielectric layer to cause the first dielectric layer to include a stepped shape;
- performing a second patterning operation on the first dielectric layer to form a gate dielectric layer of a first transistor device in the second well region;
- and
- forming a conductive layer over the first well region to obtain a Schottky barrier interface.
A method of manufacturing a semiconductor device, comprising:
- forming a first well region and a second well region in a substrate, the second well region being configured as part of a transistor device;
- forming a dielectric layer over the first well region and the second well region;
- patterning the dielectric layer such that the dielectric layer has a first portion of a first height over the second well region, a second portion of a second height, lower than the first height, over the first well region, and a third portion exposing a surface of the substrate over the first well region;
- and
- forming a silicide layer on the exposed surface of the first well region to obtain a Schottky barrier interface.
A method of manufacturing a semiconductor structure, comprising:
- forming a first well region, and a second well region in a substrate;
- forming a dielectric layer over the first well region and the second well region;
- performing a first patterning operation on the dielectric layer to form a trench in the dielectric layer over the first well region while keeping the substrate covered by the dielectric layer, and leaving a thickness of the dielectric layer substantially unchanged, over the second well region;
- performing a second patterning operation on the trench to expose a surface of the substrate while leaving the thickness of the dielectric layer substantially unchanged over the second well region;
- and
- forming a silicide layer on the exposed surface of the first well region to generate a Schottky barrier interface.
Dependencies are inferred from the claim text.