Semiconductor device and semiconductor memory device

A semiconductor memory device, comprising:

• a semiconductor layer extending in a first direction;
• a gate electrode layer including a first conductive layer containing a first material and a second conductive layer provided between the first conductive layer and the semiconductor layer and containing a second material different from the first material;
• a charge storage layer provided between the semiconductor layer and the gate electrode layer;
• a first insulating layer provided between the charge storage layer and the gate electrode layer and containing aluminum oxide, the aluminum oxide including at least one crystal phase selected from a group consisting of a (alpha)-aluminum oxide and θ (theta)-aluminum oxide;
• and
• a second insulating layer provided between the charge storage layer and the semiconductor layer,
• wherein a direction of a crystal axis of the aluminum oxide in the first insulating layer falls within a range of ±10° with respect to a second direction from the semiconductor layer toward the gate electrode layer,
• a direction of a crystal axis of the first material in the first conductive layer falls within a range of ±10° with respect to the second direction, and
• a direction of a crystal axis of the second material in the second conductive layer falls within a range of ±10° with respect to the second direction.