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US 2024/0258398 A1Published application
High electron mobility transistor and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJunhyuk PARK, Jaejoon OH, Injun HWANG, Boram KIM, Jongseob KIM, Joonyong KIM
Life of this patent
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Abstract
A high electron mobility transistor (HEMT) includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a p-type gallium nitride (GaN) layer on the barrier layer, an n-type interfacial layer on the p-type GaN layer, and a gate electrode on the n-type interfacial layer.
Claims20
A high electron mobility transistor (HEMT), comprising:
- a substrate;
- a channel layer on the substrate;
- a barrier layer on the channel layer;
- a p-type gallium nitride (GaN) layer on the barrier layer;
- an n-type interfacial layer on the p-type GaN layer;
- and
- a gate electrode on the n-type interfacial layer.
4 more elements
A method of manufacturing a high electron mobility transistor (HEMT), the method comprising:
- depositing a channel layer on a substrate;
- depositing a barrier layer on the channel layer;
- depositing a p-type gallium nitride (GaN) layer on the barrier layer;
- depositing a silicon nitride (SiN) layer on the p-type GaN layer;
- forming an n-type interfacial layer between the p-type GaN layer and the SiN layer by performing heat treatment on the SiN layer;
- and
- forming a gate electrode on the n-type interfacial layer.
4 more elements
A high electron mobility transistor (HEMT), comprising:
- a substrate;
- a channel layer on the substrate;
- a barrier layer on the channel layer;
- a two-dimensional electron gas (2DEG) layer formed between the channel layer and the barrier layer,
- a p-type gallium nitride (GaN) layer on the barrier layer;
- an n-type interfacial layer on the p-type GaN layer;
- and
- a gate electrode on the n-type interfacial layer.
5 more elements
Dependencies are inferred from the claim text.