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US 2024/0258390 A1Published application
Semiconductor device, finfet device and methods of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsPo-Hsien Cheng, Jr-Hung Li, Tai-Chun Huang, Tze-Liang Lee, Chung-Ting Ko, Jr-Yu Chen, Wan-Chen Hsieh
Life of this patent
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Abstract
A semiconductor device includes a substrate, a gate structure on the substrate, a source/drain (S/D) region and a contact. The S/D region is located in the substrate and on a side of the gate structure. The contact lands on and connected to the S/D region. The contact wraps around the S/D region.
Claims20
A method of forming a semiconductor device, comprising:
- providing a substrate having a fin and an isolation structure aside the fin;
- forming a gate structure across the fin;
- forming a S/D region in and/or on the fin and aside the gate structure;
- forming an interlayer dielectric layer on the substrate to cover the gate structure and the S/D region;
- removing a portion of the interlayer dielectric layer to form an opening exposing the S/D region and the isolation structure adjacent to the S/D region;
- forming a dummy contact to cover the S/D region exposed by the opening;
- forming a protection layer to cover the dummy contact;
- forming an additional dielectric layer to fill the opening and laterally aside the dummy contact;
- removing the dummy contact;
- and
- removing a portion of the protection layer previously covering sidewalls of the dummy contact.
8 more elements
A method of forming a semiconductor device, comprising:
- providing a substrate having a fin and an isolation structure aside the fin;
- forming a gate structure over the fin;
- forming a S/D region aside the gate structure;
- forming a dummy contact to cover the S/D region and be in contact with a top surface of the isolation structure;
- forming a protection layer to cover the dummy contact and the top surface of the isolation structure;
- removing the dummy contact to form a contact hole;
- forming a silicide layer on the S/D region in the contact hole, and having a lower portion in contact with the top surface of the isolation structure previously in contact with the dummy contact;
- and
- forming a contact on the silicide layer, covering the lower portion of the silicide layer and separated the lower portion of the silicide layer from the protection layer.
6 more elements
A method of forming a semiconductor device, comprising:
- providing a substrate having an active region and an isolation structure aside the active region;
- forming a gate structure over the active region;
- forming a S/D region in the substrate and on a side of the gate structure;
- forming a dummy contact to cover the S/D region and a top surface of the isolation structure adjacent to the S/D region;
- forming an additional dielectric layer laterally aside the dummy contact;
- removing the dummy contact to form a contact hole;
- forming a silicide layer in contact with the top surface of the isolation structure previously in contact with the dummy contact on the S/D region in the contact hole;
- and
- forming a contact wrapping around the silicide layer and the S/D region, and having a lower portion in contact with the top surface of the isolation structure previously in contact with the dummy contact and in contact with the additional dielectric layer.
6 more elements
Dependencies are inferred from the claim text.