Gallium nitride bidirectional switch device

A gallium nitride (GaN) bidirectional switch device, comprising:

• a substrate;
• a semiconductor epitaxial layer, disposed on the substrate;
• wherein the semiconductor epitaxial layer is provided with an active area and a non-active area located outside the active area;
• a first-level field plate dielectric layer, disposed on a side of the semiconductor epitaxial layer facing away from the substrate;
• wherein the first-level field plate dielectric layer is located in the active area and extends to the non-active area;
• a groove, penetrating the first-level field plate dielectric layer and the semiconductor epitaxial layer to expose a part of the substrate;
• wherein the groove is located in the non-active area;
• and
• a first first-level field plate metal and a second first-level field plate metal, spaced on a side of the first-level field plate dielectric layer facing away from the semiconductor epitaxial layer and located in the active area;
• wherein the first first-level field plate metal and the second first-level field plate metal are connected through a first interconnecting metal to form a first field plate metal interconnecting structure, and a part of the first field plate metal interconnecting structure is filled in the groove and is connected with the part of the substrate exposed by the groove.