Group iii nitride-based transistor device having a conductive redistribution structure

A Group III nitride-based transistor device, comprising:

• a source electrode, a drain electrode and a gate electrode positioned on a first major surface of a Group III nitride based-based layer, wherein the gate electrode is laterally arranged between the source electrode and the drain electrode;
• a passivation layer arranged on the first major surface;
• a field plate coupled to the source electrode, the field plate having a lower surface arranged on the passivation layer, the field plate being laterally arranged between and laterally spaced apart from the gate electrode and the drain electrode,
• wherein the source electrode, the gate electrode, the drain electrode and the field plate each have an elongate form and extend on the first major surface in a longitudinal direction substantially parallel to one another;
• and
• a conductive redistribution structure arranged above the source electrode, the gate electrode, the drain electrode and the field plate and comprising a lateral gate redistribution structure and a lateral field plate redistribution structure that are substantially coplanar at a position laterally between the source electrode and the drain electrode.