Silicon carbide power mosfet device having improved performances and manufacturing process thereof

A process for manufacturing a MOSFET device comprising:

• forming, in a substrate of silicon carbide having a first conductivity type and a main face, a body region of a second conductivity type extending from the main face and having a first depth along a first direction;
• forming, inside the body region, a first and a second source region of the first conductivity type extending from the main face and parallel to each other, the first and second source regions having a second depth along the first direction smaller than the first depth and being mutually spaced by a first distance in a second direction perpendicular to the first direction and extending in an extension direction locally perpendicular to the first and the second directions;
• and
• forming, inside the body region between the first and the second source regions, a body contact region of the second conductivity type extending from the main face, the body contact region having a third depth along the first direction greater than or equal to the second depth, wherein the body contact region has a width, in the second direction and a length, in the extension direction, much greater than the width.

A MOSFET device of a vertical conduction type, comprising:

• a substrate of silicon carbide having a first conductivity type;
• a body region of a second conductivity type extending into the substrate from a top surface of the substrate;
• a first source region of the first conductivity type extending into the body region from the top surface of the substrate;
• a second source region of the first conductivity type extending into the body region from the top surface of the substrate;
• and
• a body contact region of the second conductivity type positioned in the body region between the first source region and the second source region and extending downward from the top surface of the substrate, wherein the first source region, the second source region, and the body contact region extend as parallel stripes along the top surface of the substrate.