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US 2024/0258368 A1Published application
Buried grid with shield in wide band gap material
AssigneeII-Vi Advanced Materials, LLC
InventorHossein ELAHIPANAH
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Abstract
There is disclosed a structure in a wide band gap material such as silicon carbide wherein there is a buried grid and shields covering at least one middle point between two adjacent parts of the buried grid, when viewed from above. Advantages of the invention include easy manufacture without extra lithographic steps compared with standard manufacturing process, an improved trade-off between the current conduction and voltage blocking characteristics of a JBSD comprising the structure.
Claims20
A diode device, comprising:
- a first doped type layer of wide band gap material of a first conductivity type;
- a buried grid of a second doped type of the wide band gap material of a second conductivity type opposite to the first conductivity type, the buried grid comprising a plurality of parts having portions of the first doped type layer between the plurality of parts of the buried grid;
- and
- a plurality of shields having portions of the first doped type layer between the plurality of shields,
- wherein the shields intersect a shield plane and the shields intersect a projection onto the shield plane of a middle point between adjacent ones of the parts of the buried grid.
2 more elements
Dependencies are inferred from the claim text.