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US 2024/0258365 A1Published application
Capacitor and device including the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJinhong KIM, Changsoo LEE, Cheheung KIM, Jooho LEE
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Abstract
Provided is a capacitor including a first thin film electrode layer, a second thin film electrode layer, a dielectric layer disposed between the first thin film electrode layer and the second thin film electrode layer, and an interlayer disposed between the second thin film electrode layer and the dielectric layer. Due to the interlayer, the decrease in permittivity of the dielectric layer is small while leakage current may be effectively reduced.
Claims20
A capacitor comprising:
- a first thin film electrode layer;
- a second thin film electrode layer;
- a dielectric layer between the first thin film electrode layer and the second thin film electrode layer;
- and
- an interlayer between the second thin film electrode layer and the dielectric layer, the interlayer including a first metal oxide and a second metal oxide having a rutile phase,
- wherein the dielectric layer includes a third metal oxide having a rutile phase,
- the first metal oxide includes at least one of Al2O3 or MgO,
- the second metal oxide includes at least one of SnO2, GeO2, or MnO2,
- the third metal oxide includes at least one of TiO2, Ti1-xGaxO2 (0.01≤x≤0.1), Ti1-xAlxO2 (0.01≤x≤0.1), Ti1-xLaxO2 (0.01≤x≤0.1), Ti1-xBxO2 (0.01≤x≤0.1), Ti1-xInxO2 (0.01≤x≤0.1), Ti1-xScxO2 (0.01≤x≤0.1), or Ti1-xYxO2 (0.01≤x≤0.1), and
- the first metal oxide, the second metal oxide, and the third metal oxide have different compositions from each other.
7 more elements
A capacitor comprising:
- a first thin film electrode layer;
- a second thin film electrode layer;
- a dielectric layer between the first thin film electrode layer and the second thin film electrode layer;
- and
- an interlayer between the second thin film electrode layer and the dielectric layer, the interlayer including a first metal oxide and a second metal oxide having a rutile phase,
- wherein the dielectric layer includes a third metal oxide having a rutile phase,
- the first metal oxide, the second metal oxide, and the third metal oxide have different compositions,
- a band gap energy of the first metal oxide is 5.0 eV or more,
- a chemical potential of the second metal oxide is greater than a chemical potential of the third metal oxide, and
- the third metal oxide includes at least one of TiO2, Ti1-xGaxO2 (0.01≤x≤0.1), Ti1-xAlxO2 (0.01≤x≤0.1), Ti1-xLaxO2 (0.01≤x≤0.1), Ti1-xBxO2 (0.01≤x≤0.1), Ti1-xInxO2 (0.01≤x≤0.1), Ti1-xScxO2 (0.01≤x≤0.1), or Ti1-xYxO2 (0.01≤x≤0.1).
7 more elements
Dependencies are inferred from the claim text.