Solid-state imaging element and video recording apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorAkiko HONJO
Life of this patent
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Abstract
A solid-state imaging element according to the present disclosure includes: a first semiconductor substrate that includes a floating diffusion that temporarily holds an electric signal output from a photoelectric conversion element; and a second semiconductor substrate that faces the first semiconductor substrate, in which the second semiconductor substrate includes a first transistor disposed on a side facing the first semiconductor substrate, the first transistor including: a channel extending along a thickness direction of the second semiconductor substrate; and a multi-gate extending along the thickness direction of the second semiconductor substrate and sandwiching the channel, and the multi-gate of the first transistor is connected to the floating diffusion.
Claims10
A solid-state imaging element comprising:
- a first semiconductor substrate that includes a floating diffusion that temporarily holds an electric signal output from a photoelectric conversion element;
- and
- a second semiconductor substrate that faces the first semiconductor substrate, wherein
- the second semiconductor substrate includes a first transistor disposed on a side facing the first semiconductor substrate, the first transistor including:
- a channel extending along a thickness direction of the second semiconductor substrate;
- and
- a multi-gate extending along the thickness direction of the second semiconductor substrate and sandwiching the channel, and
- the multi-gate of the first transistor is connected to the floating diffusion.
A video recording apparatus comprising:
- a solid-state imaging element;
- an optical system that takes incident light from a subject to form an image on an imaging area of the solid-state imaging element;
- and
- a signal processing circuit that performs processing on an output signal from the solid-state imaging element, wherein
- the solid-state imaging element includes:
- a first semiconductor substrate that includes a floating diffusion that temporarily holds an electric signal output from a photoelectric conversion element;
- and
- a second semiconductor substrate that faces the first semiconductor substrate,
- the second semiconductor substrate includes a first transistor disposed on a side facing the first semiconductor substrate, the first transistor including:
- a channel extending along a thickness direction of the second semiconductor substrate;
- and
- a multi-gate extending along the thickness direction of the second semiconductor substrate and sandwiching the channel, and
- the multi-gate of the first transistor is connected to the floating diffusion.
Dependencies are inferred from the claim text.