US 2024/0258353 A1 · IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

Abstract

An image sensor includes a substrate including a plurality of pixel regions, and a deep isolation pattern in the substrate between the pixel regions. The deep isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and a dielectric pattern disposed between the substrate and the semiconductor pattern. The dielectric pattern includes a first part disposed adjacent to the semiconductor pattern, and a second part disposed between the substrate and the first part. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern is disposed between the dielectric pattern and the second semiconductor pattern. The first part of the dielectric pattern includes a material different from a material of the second part of the dielectric pattern. A thickness of the first part of the dielectric pattern is less than a thickness of the second part of the dielectric pattern.

Claims21

Dependent claims

1-20. (canceled)

An image sensor, comprising:

a substrate comprising a first surface and a second surface opposing to the first surface;
a first pixel region in the substrate;
a second pixel region in the substrate;
an optical black region in the substrate;
a first trench disposed between the first pixel region and the second pixel region,
a second trench disposed in the optical black region
a first pattern disposed in the first trench and is in contact with the first surface;
a second pattern disposed in the first trench and is in contact with the second surface and the first pattern;
a third pattern disposed in the first trench,
a fourth pattern disposed in the second trench and is in contact with the first surface;
a fifth pattern disposed in the second trench and is in contact with the second surface and the fourth pattern;
wherein the first and second trenches penetrate the substrates,
wherein the second pattern includes a first layer and a second layer between the first layer and the third pattern,
wherein the first and second layers are spaced apart from the first surface and are in contact with the second surface,
wherein the third pattern is disposed between the second layer and an inner surface of the first trench,
wherein the first trench has a first width in a first direction parallel to the first surface at the first surface and has a second width in the first direction at the second surface,
wherein the first width is greater than the second width,
wherein a distance from the first surface to a bottom of the first pattern is the same as a distance from the first surface to a bottom of the fourth pattern,
wherein the bottom of the first pattern and the bottom of the fourth pattern are spaced apart from the first surface, and
wherein the image sensor is configured to receive light from the second surface.

17 more elements

An image sensor, comprising:

a substrate comprising a first surface and a second surface opposing to the first surface;
a first pixel region in the substrate;
a second pixel region in the substrate;
an optical black region in the substrate;
a first trench disposed between the first pixel region and the second pixel region,
a second trench disposed in the optical black region
a first pattern disposed in the first trench and is in contact with the first surface;
a second pattern disposed in the first trench and is in contact with the second surface and the first pattern;
a third pattern disposed in the first trench,
a fourth pattern disposed in the second trench and is in contact with the first surface;
a fifth pattern disposed in the second trench and is in contact with the second surface and the fourth pattern;
a sixth pattern disposed in the second trench,
wherein the first and second trenches penetrate the substrates,
wherein the second pattern includes a first layer and a second layer between the first layer and the third pattern,
wherein the fifth pattern includes a third layer and a fourth layer between the third layer and the sixth pattern,
wherein the first, second, third, and fourth layers are spaced apart from the first surface and are in contact with the second surface,
wherein the third pattern is disposed between the second layer and an inner surface of the first trench,
wherein the sixth pattern is disposed between the fourth layer and an inner surface of the second trench,
wherein the first trench has a first width in a first direction parallel to the first surface at the first surface and has a second width in the first direction at the second surface,
wherein the first width is greater than the second width,
wherein a distance from the first surface to a bottom of the first pattern is the same as a distance from the first surface to a bottom of the fourth pattern,
wherein a distance from the first surface to a bottom of the first layer is the same as a distance from the first surface to a bottom of third layer,
wherein the bottom of the first pattern and the bottom of the fourth pattern are spaced apart from the first surface,
wherein the bottom of the first layer and the bottom of the third layer are spaced apart from the first surface, and
wherein the image sensor is configured to receive light from the second surface.

22 more elements

Dependencies are inferred from the claim text.

Facts

Application

18/632,810Filed 11 Apr 2024

Priority

KR 10-2020-01129004 Sep 2020

Published

1 Aug 2024

Term ends

Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10F 39/802
Constructional details of image sensors: geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
H10F 39/807
Constructional details of image sensors: pixel isolation structures
H10F 39/014
Manufacture or treatment of image sensors covered by group H10F39/12: of CMOS image sensors
H10F 39/024
Manufacture or treatment of image sensors covered by group H10F39/12: of coatings or optical elements

Image sensor and method of fabricating the same

Life of this patent

Image sensor and method of fabricating the same

Life of this patent

Abstract

Claims21